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龙浩

系别:微电子与集成电路系

职称:副教授

邮箱:longhao@xmu.edu.cn

联系方式:0592-2180000

办公地点:海韵园行政楼

个人简历:

学历:

北京大学理学学士,物理学专业

北京大学理学博士,凝聚态物理专业


研究方向:

半导体光电子学、发光二极管、半导体可见光激光器


主讲课程:

概率统计B,专业英语(本科生课)

半导体光电子学、工程伦理(研究生课)


成果奖励:

III-V族氮化物材料生长用图形化蓝宝石衬底关键技术与产业化;教育部科技进步国家二等奖(参与人)(2015


课题项目:

利用碳纳米管改善激光剥离工艺及垂直结构LED的研究,国家自然科学基金(青年)项目,2018.01-2020.12,主持

纳米图形化(001Si上生长半极性GaN及其LED器件,博士后基金,2015.11-2017.04,主持


代表作:

[1] J.Z.Wu, Hao Long * et.al.;Reduction of Lasing Threshold of GaN-Based Vertical-Cavity Surface-Emitting Lasers by Using Short Cavity Lengths; IEEE Transactions on Electron Devices; 2018, 65,6,2504-2508

[2] Hao Long, et.al.; Carbon nanotube assisted Lift off of GaN layers on sapphire; Applied Surface Science; 2017, 394, 598-603

[3] Hao Long, et.al.; Modulating Lateral Strain in GaN-Based Epitaxial Layers by Patterning Sapphire Substrates with Aligned Carbon Nanotube Films; Nano Research, 2012,5,9,646

[4] Hao Long et.al.; High quality GaN epilayers grown on carbon nanotube patterned sapphire substrate by metal–organic vapor phase epitaxy; CrystEngComm; 14,4728,2012

[5] Hao Long et.al.; Different exciton behaviors in blue and green wells of dual-wavelength InGaN/GaN MQWs structures; Journal of Applied Physics; 111, 5, 2012

[6] Hao Long et.al.; Modulation of anisotropic crystalline in a-plane GaN on HT-AlN buffer layer; Applied Surface Science; 258, 15, 2012

[7] Z.M.Zheng, Hao Long* et.al.; Loss analysis in nitride deep ultraviolet planar cavity; Journal of Nanophotonics; 12,04, 2018




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