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梅洋

系别:电子科学系/电子工程系/电磁声学研究院

职称:助理教授

邮箱:meiyang@xmu.edu.cn

联系方式:

办公地点:海韵园行政楼B516

个人简历:

学历:

2010-2014中国地质大学(武汉)大学工学学士,电子信息工程专业

2014-2020外围投注官网信誉平台工学博士,电子科学与技术专业

2017-2019 东京大学联合培养博士,电子科学与技术专业


研究方向:

半导体激光器、面发射激光器、GaN基发光器件、激子极化激元器件


主讲课程:


学术兼职:


成果奖励:


课题项目:

GaN基垂直腔面发射激光器基础研究,国家自然科学基金(重点)项目,2016-2018 主要参与

强约束条件下集成微系统的基础科学技术问题,国防科工局挑战计划 2017-2020 主要参与


代表作:(请勿用自动排序)

[1] Y. Mei et al. Quantum dot vertical-cavity surface-emitting lasers covering the ‘green gap’. Light: Science & Applications, 2017, 6 (1); e16199-e16199.

[2] Y. Mei et al. Tunable InGaN quantum dot microcavity light emitters with 129 nm tuning range from yellow-green to violet. Applied Physics Letter, 2017, 111 (12); 121107.

[3] Y. Mei et al. A comparative study of thermal characteristics of GaN-based VCSELs with three different typical structures. Semiconductor Science and Technology, 2017, 33 (1); 015016.

[4] Y. Mei et al. Room temperature continuous wave lasing of GaN-based green vertical-cavity surface-emitting lasers. Gallium Nitride Materials and Devices XIV, International Society for Optics and Photonics: 2019; p 109181H.

[5] R. Xu, Y. Mei et al. Effects of lateral optical confinement in GaN VCSELs with double dielectric DBRs. IEEE Photonics Journal, 2020, 12 (2); 1-8.

[6] H. Xu, Y. Mei et al. Green VCSELs Based on Nitride Semiconductor. Japanese Journal of Applied Physics, 2020.

[7] R. Xu, Y. Mei et al. Green Vertical-Cavity Surface-Emitting Lasers Based on Combination of Blue-Emitting Quantum Wells and Cavity-Enhanced Recombination. IEEE Transactions on Electron Devices, 2018, 65 (10); 4401-4406.

[8] R. Xu, Y. Mei et al. Simultaneous blue and green lasing of GaN-based vertical-cavity surface- emitting lasers. Semiconductor Science and Technology, 2017, 32 (10); 105012.


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